Mannion, Daniel John;
(2022)
Current transient phenomena in silicon oxide resistance switching oxides: characterisation and computational applications.
Doctoral thesis (Ph.D), UCL (University College London).
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Abstract
The current transient phenomenon is a current-time response observed in metal-insulator-metal devices, such as defective capacitors or resistance switching devices. It is a response easily identified by its rapid increase in device current followed by a slow decay, resulting in an iconic peak in device current which has historically played a key role in the analysis of current transients. Whilst the transient has mostly been interpreted as a defect to be mitigated against, it has also been used to determine properties of the oxide such as oxygen vacancy mobilities. This application of the current transient is derived from the space charge limited current (SCLC) theory which is used to explain the phenomenon’s origin. However, in this thesis I demonstrate that the SCLC model fails to hold up under scrutiny in the context of silicon oxide-based devices; a finding which is in line with inconsistencies already present within the current body of literature. I use a range of electronic and optical characterisation methods to demonstrate the current transient is the result of two changes occurring in the device each driven by different forces. This finding has significant implications on the use of the SCLC model and the act of determining mobilities from the current transient’s peak. In response, I develop a comprehensive characterisation methodology to gain a deeper insight into the current transient’s causes and propose alternative models that could potentially explain the behaviour in silicon oxide devices more accurately. Finally, I attempt to reframe the current transient not as a defect to be mitigated but as a computational tool to be used. With a deeper understanding of the current transient’s mechanics, I apply it to the problem of edge detection of images and comment on its potential to implement homeostatic behaviours in bio-inspired circuits.
| Type: | Thesis (Doctoral) |
|---|---|
| Qualification: | Ph.D |
| Title: | Current transient phenomena in silicon oxide resistance switching oxides: characterisation and computational applications |
| Open access status: | An open access version is available from UCL Discovery |
| Language: | English |
| Additional information: | Copyright © The Author 2021. Original content in this thesis is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) Licence (https://creativecommons.org/licenses/by-nc/4.0/). Any third-party copyright material present remains the property of its respective owner(s) and is licensed under its existing terms. Access may initially be restricted at the author’s request. |
| Keywords: | Memristor, silicon dioxide, current transient, edge detection, neuromorphic |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10147198 |
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