Zhang, Jiaye;
Willis, Joe;
Yang, Zhenni;
Lian, Xu;
Chen, Wei;
Wang, Lai-Sen;
Xu, Xiangyu;
... Zhang, Kelvin HL; + view all
(2022)
Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide.
Cell Reports Physical Science
, 3
(3)
, Article 100801. 10.1016/j.xcrp.2022.100801.
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Abstract
Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga_{2}O_{3} (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga_{2}O_{3} films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm^{2}/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.
| Type: | Article |
|---|---|
| Title: | Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.xcrp.2022.100801 |
| Publisher version: | https://doi.org/10.1016/j.xcrp.2022.100801 |
| Language: | English |
| Additional information: | © The Author 2022. Original content in this article is licensed under the terms of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0) Licence (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
| Keywords: | wide-bandgap semiconductor, Ga_{2}O_{3}, electronic structure, transparent conducting oxide, work-function |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Engineering Science Faculty Office UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10145864 |
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