Dang, M;
Tang, M;
Yang, JJ;
Seeds, A;
Chen, S;
Liu, H;
(2021)
InAs/GaAs Quantum-Dot Lasers Monolithically Grown on on-axis Silicon (001).
In:
LEOS Summer Topical Meeting.
IEEE: Cabo San Lucas, Mexico.
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Abstract
Inversion boundaries (IBs) are charged planer defects that arise from the growth of polar III-V materials on non-polar Si (001) substrate. This paper demonstrates a novel technique to achieve all-MBE grown, IB-free GaAs on on-axis Si (001) substrates by employing periodic Si single-atomicheight steps to re-distribute the nucleation of IBs and promote IB self-annihilation in the subsequent GaAs growth. Furthermore, an electronically pumped quantum-dot (QD) laser has been demonstrated on this IB-free GaAs/Si platform with a maximum operating temperature of 120 °C. These results could be a significant step towards the monolithic integration of III-V materials and devices with mature CMOS technology.
Type: | Proceedings paper |
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Title: | InAs/GaAs Quantum-Dot Lasers Monolithically Grown on on-axis Silicon (001) |
Event: | 2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM) |
Dates: | 19 Jul 2021 - 21 Jul 2021 |
ISBN-13: | 9781665416009 |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1109/SUM48717.2021.9505863 |
Publisher version: | https://doi.org/10.1109/SUM48717.2021.9505863 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Temperature measurement, Temperature dependence, Annealing, Temperature, Gallium arsenide, Monolithic integrated circuits, Silicon |
UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
URI: | https://discovery.ucl.ac.uk/id/eprint/10144571 |
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