UCL Discovery
UCL home » Library Services » Electronic resources » UCL Discovery

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on on-axis Silicon (001)

Dang, M; Tang, M; Yang, JJ; Seeds, A; Chen, S; Liu, H; (2021) InAs/GaAs Quantum-Dot Lasers Monolithically Grown on on-axis Silicon (001). In: LEOS Summer Topical Meeting. IEEE: Cabo San Lucas, Mexico. Green open access

[thumbnail of IEEE ST HL.pdf]
Preview
Text
IEEE ST HL.pdf - Accepted Version

Download (754kB) | Preview

Abstract

Inversion boundaries (IBs) are charged planer defects that arise from the growth of polar III-V materials on non-polar Si (001) substrate. This paper demonstrates a novel technique to achieve all-MBE grown, IB-free GaAs on on-axis Si (001) substrates by employing periodic Si single-atomicheight steps to re-distribute the nucleation of IBs and promote IB self-annihilation in the subsequent GaAs growth. Furthermore, an electronically pumped quantum-dot (QD) laser has been demonstrated on this IB-free GaAs/Si platform with a maximum operating temperature of 120 °C. These results could be a significant step towards the monolithic integration of III-V materials and devices with mature CMOS technology.

Type: Proceedings paper
Title: InAs/GaAs Quantum-Dot Lasers Monolithically Grown on on-axis Silicon (001)
Event: 2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)
Dates: 19 Jul 2021 - 21 Jul 2021
ISBN-13: 9781665416009
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/SUM48717.2021.9505863
Publisher version: https://doi.org/10.1109/SUM48717.2021.9505863
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Temperature measurement, Temperature dependence, Annealing, Temperature, Gallium arsenide, Monolithic integrated circuits, Silicon
UCL classification: UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL
URI: https://discovery.ucl.ac.uk/id/eprint/10144571
Downloads since deposit
44Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item