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The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers

Deng, Huiwen; Jarvis, Lydia; Li, Zhibo; Liu, Zizhuo; Tang, Mingchu; Li, Keshuang; Yang, Junjie; ... Smowton, Peter M; + view all (2022) The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics , 55 (21) , Article 215105. 10.1088/1361-6463/ac55c4. Green open access

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Abstract

The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below.

Type: Article
Title: The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6463/ac55c4
Publisher version: https://doi.org/10.1088/1361-6463/ac55c4
Language: English
Additional information: © 2022 IOP Publishing. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (http://creativecommons.org/licenses/by/4.0/).
UCL classification: UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL
URI: https://discovery.ucl.ac.uk/id/eprint/10144415
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