Deng, Huiwen;
Jarvis, Lydia;
Li, Zhibo;
Liu, Zizhuo;
Tang, Mingchu;
Li, Keshuang;
Yang, Junjie;
... Smowton, Peter M; + view all
(2022)
The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers.
Journal of Physics D: Applied Physics
, 55
(21)
, Article 215105. 10.1088/1361-6463/ac55c4.
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Abstract
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicates that the n-type doping technique reduced the threshold current density of InAs QD lasers across the full temperature range and narrowed the near field lasing spot. However, for short-cavity lasers, the n-type doped laser switches from ground-state to excited-state lasing at a lower temperature compared to undoped and p-type modulation-doped lasers. In contrast, the p-type modulation-doped lasers have a reduced threshold current density for higher temperatures and for shorter lasers with cavity lengths of 1 mm and below.
| Type: | Article |
|---|---|
| Title: | The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6463/ac55c4 |
| Publisher version: | https://doi.org/10.1088/1361-6463/ac55c4 |
| Language: | English |
| Additional information: | © 2022 IOP Publishing. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (http://creativecommons.org/licenses/by/4.0/). |
| UCL classification: | UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS UCL |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10144415 |
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