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Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires

Zhang, Yunyan; Fonseka, H Aruni; Yang, Hui; Yu, Xuezhe; Jurczak, Pamela; Huo, Suguo; Sanchez, Ana M; (2022) Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires. Nanoscale Horizons , 7 pp. 311-318. 10.1039/D1NH00638J. Green open access

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Abstract

Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p–i–n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the growth much more challenging compared with growths on thin-films, particularly on NWs with small diameters (Ø o 100 nm). Moreover, the {110} sidewall facets of self-catalyzed NWs favor two-dimensional growth, with the realization of three-dimensional Stranski–Krastanow growth becoming extremely challenging. Here, we have developed a novel thermally-driven QD growth method. The QD formation is driven by the system energy minimization when the pseudomorphic shell layer (made of QD material) is annealed under hightemperature, and thus without any restriction on the NW diameter or the participation of elastic strain. It has demonstrated that the lattice-matched Ge dots can be grown defect-freely in a controllable way on the sidewall facets of the thin (B50 nm) self-catalyzed GaAs NWs without using any surfactant or surface treatment. This method opens a new avenue to integrate QDs on NWs, and can allow the formation of QDs in a wider range of materials systems where the growth by traditional mechanisms is not possible, with benefits for novel NWQD-based optoelectronic devices.

Type: Article
Title: Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/D1NH00638J
Publisher version: https://doi.org/10.1039/D1NH00638J
Language: English
Additional information: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
UCL classification: UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10142977
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