Maglio, B;
Jarvis, L;
Tang, M;
Liu, H;
Smowton, PM;
(2021)
Modeling the effects of p-modulation doping in InAs quantum dot devices.
In:
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
(pp. pp. 21-22).
IEEE: Turin, Italy.
Preview |
Text
Liu_NUSOD_abstract_draft.pdf - Accepted Version Download (312kB) | Preview |
Abstract
a modeling routine has been developed to quantify the effects of p-modulation doping in the waveguide core region of InAs quantum dot (QD) devices. Utilizing one dimensional approximations, simulated outputs of reverse and forward devices are simulated providing insight into absorption and gain properties.
| Type: | Proceedings paper |
|---|---|
| Title: | Modeling the effects of p-modulation doping in InAs quantum dot devices |
| Event: | 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) |
| ISBN-13: | 9781665412766 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/NUSOD52207.2021.9541500 |
| Publisher version: | https://doi.org/10.1109/NUSOD52207.2021.9541500 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Absorption, Quantum dots, Doping, Optoelectronic devices, Numerical simulation, Semiconductor process modeling, Numerical models |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10139801 |
Loading...
Loading...Loading...Loading...Archive Staff Only
 |
View Item |
