UCL Discovery
UCL home » Library Services » Electronic resources » UCL Discovery

The Effect of Photoinduced Surface Oxygen Vacancies on the Charge Carrier Dynamics in TiO₂ Films

Dagdeviren, OE; Glass, D; Sapienza, R; Cortés, E; Maier, SA; Parkin, IP; Grütter, P; (2021) The Effect of Photoinduced Surface Oxygen Vacancies on the Charge Carrier Dynamics in TiO₂ Films. Nano Letters , 21 (19) pp. 8348-8354. 10.1021/acs.nanolett.1c02853. Green open access

[thumbnail of acsnanolett1c02853.pdf]
Preview
Text
acsnanolett1c02853.pdf - Accepted Version

Download (1MB) | Preview

Abstract

Metal-oxide semiconductors (MOS) are widely utilized for catalytic and photocatalytic applications in which the dynamics of charged carriers (e.g., electrons, holes) play important roles. Under operation conditions, photoinduced surface oxygen vacancies (PI-SOV) can greatly impact the dynamics of charge carriers. However, current knowledge regarding the effect of PI-SOV on the dynamics of hole migration in MOS films, such as titanium dioxide, is solely based upon volume-averaged measurements and/or vacuum conditions. This limits the basic understanding of hole-vacancy interactions, as they are not capable of revealing time-resolved variations during operation. Here, we measured the effect of PI-SOV on the dynamics of hole migration using time-resolved atomic force microscopy. Our findings demonstrate that the time constant associated with hole migration is strongly affected by PI-SOV, in a reversible manner. These results will nucleate an insightful understanding of the physics of hole dynamics and thus enable emerging technologies, facilitated by engineering hole-vacancy interactions.

Type: Article
Title: The Effect of Photoinduced Surface Oxygen Vacancies on the Charge Carrier Dynamics in TiO₂ Films
Location: United States
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acs.nanolett.1c02853
Publisher version: http://dx.doi.org/10.1021/acs.nanolett.1c02853
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Time-resolved atomic force microscopy, defected metal-oxide semiconductors, surface defects, titanium dioxide (TiO2), ultraviolet irradiation
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/10135928
Downloads since deposit
77Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item