Zhu, J;
Wu, W;
Fisher, AJ;
(2021)
Multihole models for deterministically placed acceptor arrays in silicon.
Physical Review B
, 104
(12)
, Article 125415. 10.1103/PhysRevB.104.125415.
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Abstract
In this paper, we compute the electronic structure of acceptor clusters in silicon by using three different methods to take into account electron correlations: the full configuration interaction (full CI calculation), the Heitler-London approximation (HL approximation), and the unrestricted Hartree-Fock method (UHF method). We show that both the HL approach and the UHF method are good approximations to the ground state of the full CI calculation for a pair of acceptors and for finite linear chains along [001], [110], and [111]. The total energies for finite linear chains show the formation of a fourfold-degenerate ground state (lying highest in energy), below which there are characteristic low-lying eightfold and fourfold degeneracies, when there is a long (weak) bond at the end of the chain. We present evidence that this is a manifold of topological edge states. We identify a change in the angular momentum composition of the ground state at a critical pattern of bond lengths, and show that it is related to a crossing in the Fock matrix eigenvalues. We also test the symmetry of the self-consistent mean-field UHF solution and compare it to the full CI; the symmetry is broken under almost all the arrangements by the formation of a magnetic state in UHF, and we find further broken symmetries for some particular arrangements related to crossings (or potential crossings) between the Fock-matrix eigenvalues in the [001] direction. We also compute the charge distributions across the acceptors obtained from the eigenvectors of the Fock matrix; we find that, with weak bonds at the chain ends, two holes are localized at either end of the chain while the others have a nearly uniform distribution over the middle; this also implies the existence of the nontrivial edge states. We also apply the UHF method to treat an infinite linear chain with periodic boundary conditions, where the full CI calculation and the HL approximation cannot easily be used. We find the band structures in the UHF approximation, and compute the Zak phases for the occupied Fock-matrix eigenvalues; however, we find they do not correctly predict the topological edge states formed in this interacting system. On the other hand, we find that direct study of the quantum numbers characterizing the edge states, introduced by Turner et al. [Phys. Rev. B 83, 075102 (2011)], provides a better insight into their topological nature.
Type: | Article |
---|---|
Title: | Multihole models for deterministically placed acceptor arrays in silicon |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1103/PhysRevB.104.125415 |
Publisher version: | http://doi.org/10.1103/PhysRevB.104.125415 |
Language: | English |
Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, SEMICONDUCTORS, RESONANCE, GERMANIUM, SPECTRA, STATES |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > MAPS Faculty Office > Institute for Materials Discovery |
URI: | https://discovery.ucl.ac.uk/id/eprint/10134639 |
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