Boras, G;
Yu, X;
Fonseka, HA;
Davis, G;
Velichko, AV;
Gott, JA;
Zeng, H;
... Liu, H; + view all
(2021)
Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates.
The Journal of Physical Chemistry C
10.1021/acs.jpcc.1c03680.
(In press).
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Abstract
Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with complementary metal–oxide–semiconductor (CMOS) technology applications. Structural studies reveal the self-formation of an Al-rich AlGaAs shell, thicker at the NW base and thinning towards the tip, with the opposite behavior observed for the NW core. Wide alloy fluctuations in the shell region are also noticed. AlGaAs NW structures with nominal Al contents of 10, 20, and 30% have strong room temperature photoluminescence, with emission in the range of 1.50–1.72 eV. Individual NWs with an embedded 4.9 nm-thick GaAs region exhibit clear QD behavior, with spatially localized emission, both exciton and biexciton recombination lines, and an exciton line width of 490 μeV at low temperature. Our results demonstrate the properties and behavior of the AlGaAs NWs and AlGaAs/GaAs NWQDs grown via the self-catalyzed approach for the first time and exhibit their potential for a range of novel applications, including nanolasers and single-photon sources.
Type: | Article |
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Title: | Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1021/acs.jpcc.1c03680 |
Publisher version: | https://doi.org/10.1021/acs.jpcc.1c03680 |
Language: | English |
Additional information: | © 2021 The Authors. Published by American Chemical Society. This is an Open Access article published under the terms of a Creative Commons license (https://creativecommons.org/licenses/by/4.0/). |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10130347 |




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