Gao, DZ;
Strand, J;
El-Sayed, A-M;
Shluger, AL;
Padovani, A;
Larcher, L;
(2018)
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.
In:
2018 IEEE International Reliability Physics Symposium (IRPS).
IEEE: Burlingame, CA, USA.
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Abstract
We investigated possible mechanisms for correlated defect production in amorphous (a) SiO 2 and HfO 2 films under applied stress bias using ab initio simulations. During bias application, electron injection into these films may lead to the localization of up to two electrons at intrinsic trapping sites which are present due to the natural structural disorder in amorphous structures. Trapping two electrons weakens Si-O and Hf-O bonds to such an extent that the thermally activated creation of Frenkel defects, O vacancies and O 2- interstitial ions, becomes efficient even at room temperature. Bias application affects defect creation barriers and O 2- interstitial diffusion. The density of trapping sites is different in a-SiO 2 and a-HfO 2 . This leads to qualitatively different degradation kinetics, which results from different correlation in defect creation in the two materials. These effects affect TDDB statistics and its dependence on the film thickness.
| Type: | Proceedings paper |
|---|---|
| Title: | Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films |
| Event: | IEEE International Reliability Physics Symposium (IRPS) |
| Location: | Burlingame, CA |
| Dates: | 11 March 2018 - 15 March 2018 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/IRPS.2018.8353602 |
| Publisher version: | https://doi.org/10.1109/IRPS.2018.8353602 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Amorphous SiO2, HfO2; Dielectric breakdown; Defect creation; DFT calculations; Electron traps. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10123097 |
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