Lu, Y;
Cao, V;
Liao, M;
Li, W;
Tang, M;
Li, A;
Smowton, P;
... Chen, S; + view all
(2020)
Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon.
Optics Letters
, 45
(19)
p. 5468.
10.1364/ol.401042.
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Abstract
High-power, broadband quantum-dot (QD) superluminescent diodes (SLDs) are ideal light sources for optical coherence tomography (OCT) imaging systems but have previously mainly been fabricated on native GaAs- or InP-based substrates. Recently, significant progress has been made to emigrate QD SLDs from native substrates to silicon substrates. Here, we demonstrate electrically pumped continuous-wave InAs QD SLDs monolithically grown on silicon substrates with significantly improved performance thanks to the achievement of a low density of defects in the III-V epilayers. The fabricated narrow-ridge-waveguide device exhibits a maximum 3 dB bandwidth of 103 nm emission spectrum centered at the O-band together with a maximum single facet output power of 3.8 mW at room temperature. The silicon-based SLD has been assessed for application in an OCT system. Under optimized conditions, a predicted axial resolution of ∼5.3µm is achieved with a corresponding output power of 0.66 mW/facet.
Type: | Article |
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Title: | Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1364/ol.401042 |
Publisher version: | https://doi.org/10.1364/OL.401042 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10110081 |




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