Zhang, Y;
Velichko, AV;
Fonseka, HA;
Parkinson, P;
Gott, JA;
Davis, G;
Aagesen, M;
... Liu, H; + view all
(2021)
Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement.
Nano Letters
10.1021/acs.nanolett.1c01461.
(In press).
Preview |
Text
Huo_Defect-Free Axially Stacked GaAs:GaAsP Nanowire Quantum Dots with Strong Carrier Confinement_AOP.pdf - Published Version Download (6MB) | Preview |
Abstract
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.
| Type: | Article |
|---|---|
| Title: | Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement |
| Location: | United States |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1021/acs.nanolett.1c01461 |
| Publisher version: | https://doi.org/10.1021/acs.nanolett.1c01461 |
| Language: | English |
| Additional information: | © 2021 The Authors. Published by American Chemical Society. This is an Open Access article published under the terms of a Creative Commons license (https://creativecommons.org/licenses/by/4.0/). |
| Keywords: | axially stacked quantum dots, carrier confinement, defect-free crystal, exciton−biexciton splitting, long-term stability, nanowire |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10105445 |
Loading...
Loading...Loading...Loading...Archive Staff Only
 |
View Item |
