Marshall, Richard Duncan; (1995) Surface reactions of GaAs and their application to integrated dry etching processes. Doctoral thesis (Ph.D), UCL (University College London).

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Abstract

Current microelectronic device fabrication is close to realising the natural limits of performance based on the preferred processing methodology. In order to make significant advances many issues have to be addressed such as the ultimate resolution achievable and the acceptable level of deleterious processing. A new manufacturing philosophy centred on all vacuum processing is a solution to these problems. The etching of GaAs(100) is an essential step in device manufacture and as current methods are incompatible with all vacuum processing then new procedures must be sought. This thesis addresses the issues involved in vacuum integrated processing with particular reference to etching, reviews current technologies and outlines how a surface analytical approach may be used to evaluate the potential performance of etching precursors under different experimental configurations. This has been achieved by employing the surface science techniques of Thermal Desorption Spectroscopy, Auger Electron Spectroscopy and Low Energy Electron Diffraction in conjunction with inert low-energy ion bombardment of adsorbed multilayers. Chlorine, the most commonly employed etchant is found to have a number of limitations and 1,2-dichloroethane and sulphuryl dichloride are discussed as alternative etching precursors. The surface chemical reactivity observed when each of these species interacts with GaAs(100) has been fully characterised and the effect of ion beams on adsorbed layers analysed. From the results clear implications for an ideal etchant gas and optimal etch conditions for integrated processing of GaAs are demonstrated.

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