Xu, H;
Zhu, J;
Zou, G;
Liu, W;
Li, X;
Li, C;
Ryu, GH;
... Liu, H; + view all
(2020)
Spatially Bandgap-Graded MoS₂₍₁-ₓ₎Se₂ₓ Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors.
Nano-Micro Letters
, 12
, Article 26. 10.1007/s40820-019-0361-2.
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Abstract
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.
| Type: | Article |
|---|---|
| Title: | Spatially Bandgap-Graded MoS₂₍₁-ₓ₎Se₂ₓ Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1007/s40820-019-0361-2 |
| Publisher version: | https://doi.org/10.1007/s40820-019-0361-2 |
| Language: | English |
| Additional information: | This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
| Keywords: | Transition metal dichalcogenides, Graded bandgaps, Homojunctions, Phototransistors, Self-powered |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10092829 |
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