Pakpour-Tabrizi, A;
Schenk, A;
Holt, AJ;
Mahatha, SK;
Arnold, F;
Bianchi, M;
Jackman, R;
... Mazzola, F; + view all
(2020)
The occupied electronic structure of ultrathin boron doped diamond.
Nanoscale Advances
10.1039/c9na00593e.
(In press).
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Abstract
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
Type: | Article |
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Title: | The occupied electronic structure of ultrathin boron doped diamond |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1039/c9na00593e |
Publisher version: | https://doi.org/10.1039/c9na00593e |
Language: | English |
Additional information: | This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence (http://creativecommons.org/licenses/by-nc/3.0/). |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10092236 |




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