Yu, P;
Li, Z;
Wu, T;
Wang, Y-T;
Tong, X;
Li, C-F;
Wang, Z;
... Wang, ZM; + view all
(2019)
Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission.
ACS Nano
, 13
(11)
pp. 13492-13500.
10.1021/acsnano.9b07204.
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Abstract
Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a “surface-free” GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor–liquid–solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The “surface-free” nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.
Type: | Article |
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Title: | Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission |
Location: | United States |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1021/acsnano.9b07204 |
Publisher version: | https://doi.org/10.1021/acsnano.9b07204 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | single photon source nanowire quantum dot photon antibunching surface engineering |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10086876 |




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