González Burguete, C;
(2018)
Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (I).
Presented at: The Mildner Memorial Lecture 2018, London, UK.
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Abstract
p-i-n InAs/GaSb* type II superlattice (SL) photodiodes were directly grown on Si* substrates. SL structures were grown monolithically on miscut Si substrates via a 10nm AlSb* nucleation layer. AFM and XRD measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. PL characterization indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.
| Type: | Poster |
|---|---|
| Title: | Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates (I) |
| Event: | The Mildner Memorial Lecture 2018 |
| Location: | London, UK |
| Dates: | 16 May 2018 |
| Open access status: | An open access version is available from UCL Discovery |
| Publisher version: | https://www.ee.ucl.ac.uk/mildner/mildner-lecture-2... |
| Language: | English |
| Keywords: | T2SL, GaAs |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10084608 |
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