Martin-Sanchez, D;
Kovylina, M;
Ponce-Alcantara, S;
Garcia-Ruperez, J;
(2019)
Thermo-Optic Coefficient of Porous Silicon in the Infrared Region and Oxidation Process at Low Temperatures.
Journal of The Electrochemical Society
, 166
(6)
B355-B359.
10.1149/2.0341906jes.
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Abstract
In this work, a porous silicon nanostructure has been fabricated by electrochemical means and used as a thermal sensor. The thermo-optic effect in the near infrared region has been experimentally studied based on spectroscopy measurements. Values of the thermo-optic coefficient between 3.2 and 7.9·10^{-5} K^{-1} have been obtained, depending on the porosity, reaching a maximum thermal sensitivity of 91 ± 3 pm/°C during the experiments carried out with the fabricated samples. Additionally, the oxidation process of the sensor at temperatures below 500 K has been studied, showing that the growth of the silicon oxide was dependent on the characteristics of the porous layers. Based on the experimental results, a mathematical model was developed to estimate the evolution of the oxidation process as a function of porosity and thickness.
Type: | Article |
---|---|
Title: | Thermo-Optic Coefficient of Porous Silicon in the Infrared Region and Oxidation Process at Low Temperatures |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1149/2.0341906jes |
Publisher version: | https://doi.org/10.1149/2.0341906jes |
Language: | English |
Additional information: | © The Author(s) 2019. Published by ECS (http://creativecommons.org/licenses/by/4.0/). |
Keywords: | Etching - Electrochemical, Optoelectronics, Sensors, oxidation, porous silicon, thermo-optical effect |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Med Phys and Biomedical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/10082997 |




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