Deng, H;
Li, K;
Tang, M;
Wu, J;
Liao, M;
Lu, Y;
Pan, S;
... Liu, H; + view all
(2019)
III-V Quantum Dot Lasers Monolithically Grown on Silicon.
In: Doverspike, Robert and Kutcha, Dan and Shieh, William, (eds.)
Proceedings of the Optical Fiber Communications Conference and Exhibition 2019 (OFC 2019).
IEEE
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Abstract
We review the direct growth of III-V quantum dot laser on Si substrates. A low threading dislocation density, on the order of 10 5 cm -2 , for III-V epilayer on Si has been achieved.
| Type: | Proceedings paper |
|---|---|
| Title: | III-V Quantum Dot Lasers Monolithically Grown on Silicon |
| Event: | Optical Fiber Communications Conference and Exhibition (OFC) 2019 |
| Location: | San Diego (CA), USA, |
| Dates: | 3rd-7th March 2019 |
| ISBN-13: | 978-1-943580-53-8 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1364/OFC.2019.W4E.1 |
| Publisher version: | http://doi.org/10.1364/OFC.2019.W4E.1 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Silicon, Substrates, Quantum dot lasers, Gallium arsenide, Germanium |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10082580 |
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