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Radiation Hardness of GaAs p-i-n Diodes to Neutron Irradiation

Manolopoulos, S; Manolopoulos, S; (1996) Radiation Hardness of GaAs p-i-n Diodes to Neutron Irradiation. In: Gallium Arsenide and Related Compounds Proceedings of the Third International Workshop. (pp. pp. 144-151). World Scientific Green open access

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Type: Proceedings paper
Title: Radiation Hardness of GaAs p-i-n Diodes to Neutron Irradiation
Event: Gallium Arsenide and Related Compounds : Third International Workshop
Location: San Miniato (Italy)
ISBN: 981-02-2393-5
ISBN-13: 978-981-02-2393-9
Open access status: An open access version is available from UCL Discovery
DOI: 10.1142/9789814532297
Publisher version: https://doi.org/10.1142/9789814532297
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Med Phys and Biomedical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10081709
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