Manolopoulos, S;
Manolopoulos, S;
(1996)
Radiation Hardness of GaAs p-i-n Diodes to Neutron Irradiation.
In:
Gallium Arsenide and Related Compounds Proceedings of the Third International Workshop.
(pp. pp. 144-151).
World Scientific
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| Type: | Proceedings paper |
|---|---|
| Title: | Radiation Hardness of GaAs p-i-n Diodes to Neutron Irradiation |
| Event: | Gallium Arsenide and Related Compounds : Third International Workshop |
| Location: | San Miniato (Italy) |
| ISBN: | 981-02-2393-5 |
| ISBN-13: | 978-981-02-2393-9 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1142/9789814532297 |
| Publisher version: | https://doi.org/10.1142/9789814532297 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Med Phys and Biomedical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10081709 |
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