Huang, J;
Guo, D;
Deng, Z;
Liu, H;
Wu, J;
Chen, B;
(2018)
Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate.
In: He, Jianjun and Dong, Xinyong and Shum Ping, Perry, (eds.)
Proceedings of the 2018 Asia Communications and Photonics Conference (ACP 2018).
IEEE Xplore: New York, USA.
Preview |
Text
GaAs based InAs GaSb T2SL PD v3[1].pdf - Accepted Version Download (659kB) | Preview |
Abstract
We present a GaAs based PiBN InAs/GaSb type II superlattice photodetector for mid infrared application with peak responsivity of 0.52A/W at 3.2um at 77K under 0V.
| Type: | Proceedings paper |
|---|---|
| Title: | Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate |
| Event: | 2018 Asia Communications and Photonics Conference (ACP 2018), 26-29 October 2018, Hangzhou, China |
| ISBN-13: | 9781538661581 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/ACP.2018.8595800 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Gallium arsenide, Photodetectors, Substrates, Dark current, Temperature measurement, Superlattices, Detectors |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10081132 |
Archive Staff Only
 |
View Item |
