Deng, Z;
Guo, D;
Burguete, CG;
Xie, Z;
Huang, J;
Liu, H;
Wu, J;
(2019)
Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector.
Infrared Physics and Technology
, 101
pp. 133-137.
10.1016/j.infrared.2019.06.011.
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Abstract
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P ∼ I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under −0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-related generation-recombination, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ∼5.5 µm at 70 K under bias of −0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3 × 109 cm∙Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface and material growth quality are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.
| Type: | Article |
|---|---|
| Title: | Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.infrared.2019.06.011 |
| Publisher version: | https://doi.org/10.1016/j.infrared.2019.06.011 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | InAs/GaSb, type-II superlattice, Mid-wave infrared, Silicon photonics |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10081131 |
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