Tang, M;
Park, JS;
Wang, Z;
Chen, S;
Jurczak, P;
Seeds, A;
Liu, H;
(2019)
Integration of III-V lasers on Si for Si photonics.
Progress in Quantum Electronics
, 66
pp. 1-18.
10.1016/j.pquantelec.2019.05.002.
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Tang Review Paper of III-V Lasers on Silicon New V6 (002).pdf - Accepted Version Download (2MB) | Preview |
Abstract
Development of Si photonic integrated circuits (PICs) has been impeded due to lack of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and Si are very inefficient at emitting light. Therefore, direct-bandgap III-V semiconductors have been extensively exploited for the active region of the lasers for PICs. Heterogeneous and monolithic integration of III-V semiconductor components on Si platforms have been considered as promising solutions to achieve practical on-chip light-emitting sources for Si photonics. This paper reviews the latest developments on telecommunication wavelength III-V lasers integrated on Si substrates, in terms of integration methods and laser performance.
| Type: | Article |
|---|---|
| Title: | Integration of III-V lasers on Si for Si photonics |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.pquantelec.2019.05.002 |
| Publisher version: | https://doi.org/10.1016/j.pquantelec.2019.05.002 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10081090 |
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