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Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Chen, X; Zhang, Z; Zhang, Y; Yao, B; Li, B; Gong, Q; (2019) Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience. Crystals , 9 (4) , Article 204. 10.3390/cryst9040204. Green open access

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Abstract

Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.

Type: Article
Title: Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
Open access status: An open access version is available from UCL Discovery
DOI: 10.3390/cryst9040204
Publisher version: https://doi.org/10.3390/cryst9040204
Language: English
Additional information: This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Keywords: molecular beam epitaxy; ZnO; dopant; defects
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10079246
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