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Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions

Liao, M; Li, W; Tang, M; Li, A; Chen, S; Seeds, A; Liu, H; (2019) Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions. Semiconductor Science and Technology , 34 (8) , Article 085004. 10.1088/1361-6641/ab2c24. Green open access

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Abstract

The ability to tailor the bandgap of III–V compound semiconductors spatially, across the wafer is highly desirable for monolithically integrating photonic components with multi-functions. Using rapid thermal annealing with SiO2 and TiO2 capping layers as a selective area intermixing technique, we have demonstrated selective area bandgap tuning of III–V quantum dot (QD) material on a silicon (Si) substrate. Electrically pumped InAs/GaAs QD lasers directly grown on Si with dual-wavelength lasing emissions of 1275 and 1313 nm have been fabricated by this technique. This result indicates that the selective area intermixing technique can potentially be used in optical integrated circuits for Si photonics.

Type: Article
Title: Selective area intermixing of III-V quantum-dot lasers grown on silicon with two wavelength lasing emissions
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6641/ab2c24
Publisher version: https://doi.org/10.1088/1361-6641/ab2c24
Language: English
Additional information: Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, quantum-dot laser, intermixing, silicon photonics, ELECTRONIC-STRUCTURE, SI
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10078722
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