Eriksson, K;
Darwazeh, I;
Zirath, H;
(2015)
InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth.
IEEE Transactions on Microwave Theory and Techniques
, 63
(4)
pp. 1334-1341.
10.1109/TMTT.2015.2405916.
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Abstract
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc.
| Type: | Article |
|---|---|
| Title: | InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/TMTT.2015.2405916 |
| Publisher version: | https://doi.org/10.1109/TMTT.2015.2405916 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Gain, Bandwidth, Attenuation, Frequency measurement, Noise, Noise measurement, Microstrip |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10073802 |
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