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InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth

Eriksson, K; Darwazeh, I; Zirath, H; (2015) InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth. IEEE Transactions on Microwave Theory and Techniques , 63 (4) pp. 1334-1341. 10.1109/TMTT.2015.2405916. Green open access

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Abstract

Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed and measured. The amplifiers use different types of distributed amplifier (DA) topologies, all based on cascode gain cells. A single-stage DA design achieves 7.5-dB gain and 192-GHz bandwidth and a two-cascaded single-stage DA achieves an average gain of 16 dB with a bandwidth of 235 GHz. The third circuit is a conventional DA with more than 10-dB gain from 70 kHz up to 180 GHz. To the authors' best knowledge, the single-stage DA and the two-cascaded single-stage DA are the widest band amplifiers in any technology reported to date. Furthermore, the conventional DA has a record bandwidth for circuits in conventional DA topology with gain from near dc.

Type: Article
Title: InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/TMTT.2015.2405916
Publisher version: https://doi.org/10.1109/TMTT.2015.2405916
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Gain, Bandwidth, Attenuation, Frequency measurement, Noise, Noise measurement, Microstrip
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10073802
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