Alqahtani, M;
Ben-Jabar, S;
Ebaid, M;
Sathasivam, S;
Jurczak, P;
Xia, X;
Alromaeh, A;
... Wu, J; + view all
(2019)
Gallium Phosphide photoanode coated with TiO₂ and CoOₓ for stable photoelectrochemical water oxidation.
Optics Express
, 27
(8)
A364-A371.
10.1364/OE.27.00A364.
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Abstract
Gallium Phosphide (GaP) has a band gap of 2.26 eV and a valance band edge that is more negative than the water oxidation level. Hence, it may be a promising material for photoelectrochemical water splitting. However, one thing GaP has in common with other III-V semiconductors is that it corrodes in photoelectrochemical reactions. Cobalt oxide (CoOₓ) is a chemically stable and highly active oxygen evolution reaction co-catalyst. In this study, we protected a GaP photoanode by using a 20 nm TiO₂ as a protection layer and a 2 nm cobalt oxide co-catalyst layer, which were both deposited atomic layer deposition (ALD). A GaP photoanode that was modified by CoOₓ exhibited much higher photocurrent, potential, and photon-to-current efficiency than a bare GaP photoanode under AM1.5G illumination. A photoanode that was coated with both TiO₂ and CoOₓ layers was stable for over 24 h during constant reaction in 1 M NaOH (pH 13.7) solution under one sun illumination.
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