Nur, S;
Lim, H-J;
Elzerman, J;
Morton, JJL;
(2019)
Silicon photonic crystal cavities at near band-edge wavelengths.
Applied Physics Letters
, 114
(9)
, Article 091101. 10.1063/1.5067358.
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Abstract
We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 lm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate as a soft electron-beam mask and a Chemical Vapour Deposition grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor (Q) of 5000 at a wavelength of 1.078 lm, measured using cavity reflection measurements at room temperature. We observe a decrease in Q as the cavity resonance shifts to shorter wavelengths (Q3000 at wavelengths <1.070 lm), which is mostly due to the intrinsic absorption of silicon.
Type: | Article |
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Title: | Silicon photonic crystal cavities at near band-edge wavelengths |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1063/1.5067358 |
Publisher version: | https://doi.org/10.1063/1.5067358 |
Language: | English |
Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
URI: | https://discovery.ucl.ac.uk/id/eprint/10072361 |
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