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Silicon photonic crystal cavities at near band-edge wavelengths

Nur, S; Lim, H-J; Elzerman, J; Morton, JJL; (2019) Silicon photonic crystal cavities at near band-edge wavelengths. Applied Physics Letters , 114 (9) , Article 091101. 10.1063/1.5067358. Green open access

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Abstract

We demonstrate photonic crystal L3 cavities with a resonant wavelength of around 1.078 lm on an undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons. We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate as a soft electron-beam mask and a Chemical Vapour Deposition grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor (Q) of 5000 at a wavelength of 1.078 lm, measured using cavity reflection measurements at room temperature. We observe a decrease in Q as the cavity resonance shifts to shorter wavelengths (Q3000 at wavelengths <1.070 lm), which is mostly due to the intrinsic absorption of silicon.

Type: Article
Title: Silicon photonic crystal cavities at near band-edge wavelengths
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.5067358
Publisher version: https://doi.org/10.1063/1.5067358
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: https://discovery.ucl.ac.uk/id/eprint/10072361
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