Li, K;
Tang, M;
Liao, M;
Wu, J;
Chen, S;
Seeds, A;
Liu, H;
(2019)
InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform.
In:
2018 IEEE International Electron Devices Meeting (IEDM).
IEEE: San Francisco, CA, USA.
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Abstract
III-V quantum dot lasers monolithically integrated on silicon platform attracts intensive interests due to its advantages on providing a promising solution for reliable and efficient light source to integrated on photonics and electronics circuits. Compared to wafer bonding technique, monolithic integration its more attractive for large scale, low cost and streamline fabrication. In this paper, we give a brief review on our recent progress of III-V quantum dot lasers monolithically integrated on 4° offcut and exact (001) Si substrates for the silicon photonic integration.
| Type: | Proceedings paper |
|---|---|
| Title: | InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform |
| Event: | 64th IEEE Annual International Electron Devices Meeting (IEDM) |
| Location: | San Francisco, CA |
| Dates: | 01 - 05 December 2018 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/IEDM.2018.8614481 |
| Publisher version: | https://doi.org/10.1109/IEDM.2018.8614481 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Quantum dot lasers, Silicon, Substrates, Gallium arsenide, Pump lasers, Laser excitation |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10070707 |
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