Li, K;
Liu, Z;
Tang, M;
Liao, M;
Kim, D;
Deng, H;
Sanchez, AM;
... Liu, H; + view all
(2019)
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate.
Journal of Crystal Growth
, 511
pp. 56-60.
10.1016/j.jcrysgro.2019.01.016.
(In press).
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Abstract
The concept of high-efficiency, high-reliability and low-threshold electrically pumped lasers monolithically grown on silicon has attracted great attention over the past several decades, as a promising on-chip optical source for Si photonics. In this paper, we report an electrically pumped continuous-wave (CW) 1.3 µm InAs/GaAs quantum dot (QD) lasers grown on a complementary metal-oxidesemiconductor (CMOS) compatible Si exact (0 0 1) substrate with reduced GaAs buffer thickness down to ∼2 µm. A threshold current density (Jth) as low as ∼160 A/cm2 has been achieved at room temperature. The characteristic temperature (T0) obtained is ∼60.8 K and laser operation is observed up to 52 °C under CW mode. These results suggest that an O-band InAs/GaAs QD laser could be very promising to develop a monolithically integrated on-chip optical source for Si photonics.
| Type: | Article |
|---|---|
| Title: | O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.jcrysgro.2019.01.016 |
| Publisher version: | https://doi.org/10.1016/j.jcrysgro.2019.01.016 |
| Language: | English |
| Additional information: | This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| Keywords: | A1. Low dimensional structures, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B3. Laser Diodes |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10068348 |
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