Shutts, S;
Allford, CP;
Spinnler, C;
Li, Z;
Tang, M;
Liu, H;
Smowton, PM;
(2018)
Degradation Studies of InAs / GaAs QD Lasers Grown on Si.
In:
Proceedings of the 2018 IEEE International Semiconductor Laser Conference (ISLC).
(pp. pp. 85-86).
IEEE: Danvers (MA), USA.
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Abstract
Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.
| Type: | Proceedings paper |
|---|---|
| Title: | Degradation Studies of InAs / GaAs QD Lasers Grown on Si |
| Event: | 2018 IEEE International Semiconductor Laser Conference (ISLC) |
| Location: | Sante Fe (NM), USA |
| Dates: | 16th-19th September 2018 |
| ISBN-13: | 978-1-5386-6486-5 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/ISLC.2018.8516178 |
| Publisher version: | https://doi.org/10.1109/ISLC.2018.8516178 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Measurement by laser beam, Quantum dot lasers, Laser modes, Degradation, Silicon, Optical losses, Cavity resonators |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10067605 |
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