Liao, M;
Chen, S;
Liu, Z;
Wang, Y;
Ponnampalam, L;
Zhou, Z;
Wu, J;
... Liu, H; + view all
(2018)
Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon.
Photonics Research
, 6
(11)
pp. 1062-1066.
10.1364/PRJ.6.001062.
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Abstract
We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than −150 dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.
| Type: | Article |
|---|---|
| Title: | Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1364/PRJ.6.001062 |
| Publisher version: | https://doi.org/10.1364/PRJ.6.001062 |
| Language: | English |
| Additional information: | Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License (http://creativecommons.org/licenses/by/4.0/). Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10057113 |
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