Guo, D;
Jiang, Q;
Tang, M;
Chen, S;
Mazur, YI;
Maidaniuk, Y;
Benamara, M;
... Wu, J; + view all
(2018)
Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon.
Semiconductor Science and Technology
, 33
(9)
, Article 094009. 10.1088/1361-6641/aad83c.
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Abstract
An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm.
| Type: | Article |
|---|---|
| Title: | Two-colour In0.5Ga0.5As quantum dot infrared photodetectors on silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/1361-6641/aad83c |
| Publisher version: | https://doi.org/10.1088/1361-6641/aad83c |
| Language: | English |
| Additional information: | Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| Keywords: | photodetectors, infrared, silicon, quantum dots, molecular beam epitaxy |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10055368 |
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