Cottom, J;
Gruber, G;
Pobegen, G;
Aichinger, T;
Shluger, AL;
(2018)
Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations.
Journal of Applied Physics
, 124
(4)
, Article 045302. 10.1063/1.5024608.
Preview |
Text
1.5024608.pdf - Published Version Download (5MB) | Preview |
Abstract
The selectivity of electrically detected magnetic resonance (EDMR) is utilized to probe the dominant recombination defect at the Si-face 4H-SiC/SiO2interface. The nature of this defect has long been debated with the two main candidates being the Si vacancy (VSi) or the C-dangling bond (PbC). Through comparison between experimental EDMR measurements and ab initio calculations, an important performance limiting recombination defect observed with EDMR in the current generation of nMOSFETs is reasonably explained as a combination of the PbCand the dual-PbCdefects. These defects match the symmetry, hyperfine interaction, and isotopic abundance observed in the experimental EDMR spectrum.
| Type: | Article |
|---|---|
| Title: | Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.5024608 |
| Publisher version: | https://doi.org/10.1063/1.5024608 |
| Language: | English |
| Additional information: | This is the published version of record. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10054655 |
Archive Staff Only
 |
View Item |
