Kenyon, AJ;
Munde, M;
Ng, W;
Buckwell, M;
Joksas, D;
Mehonic, A;
(2018)
The interplay between structure and function in redox-based resistance switching.
Faraday Discussions
10.1039/C8FD00118A.
(In press).
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Abstract
We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an intial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages. Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.
| Type: | Article |
|---|---|
| Title: | The interplay between structure and function in redox-based resistance switching |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1039/C8FD00118A |
| Publisher version: | http://dx.doi.org/10.1039/C8FD00118A |
| Language: | English |
| Additional information: | This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. (https://creativecommons.org/licenses/by/3.0/) |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Chemical Engineering UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10051529 |
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