Tsui, HCL;
Goff, LE;
Barradas, NP;
Alves, E;
Pereira, S;
Palgrave, RG;
Davies, RJ;
... Moram, MA; + view all
(2016)
Composition measurement of epitaxial ScxGa1-xN films.
Semiconductor Science and Technology
, 31
, Article 064002. 10.1088/0268-1242/31/6/064002.
Preview |
Text
Palgrave ScGaN composition measurement paper draft - updated 4.pdf - Accepted Version Download (441kB) | Preview |
Abstract
Four different methods for measuring the compositions of epitaxial Sc x Ga1−x N films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial Sc x Ga1−x N films with 0 ≤ x ≤ 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.
Type: | Article |
---|---|
Title: | Composition measurement of epitaxial ScxGa1-xN films |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1088/0268-1242/31/6/064002 |
Publisher version: | https://doi.org/10.1088/0268-1242/31/6/064002 |
Language: | English |
Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Condensed Matter, Engineering, Materials Science, Physics, ScGaN, Rutherford backscattering, x-ray photoelectron spectroscopy, composition measurement, SCANDIUM NITRIDE FILMS, THIN-FILMS, BAND-GAP, INGAN EPILAYERS, GROWTH, SCGAN, MICROSTRUCTURE, SURFACE, PLASMA, LAYERS |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
URI: | https://discovery.ucl.ac.uk/id/eprint/10048282 |
Archive Staff Only
View Item |