Pla, JJ;
Bienfait, A;
Pica, G;
Mansir, J;
Mohiyaddin, FA;
Zeng, Z;
Niquet, YM;
... Bertet, P; + view all
(2018)
Strain-Induced Spin-Resonance Shifts in Silicon Devices.
Phys. Rev. Applied
, 9
(4)
, Article 044014. 10.1103/PhysRevApplied.9.044014.
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Abstract
In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.
| Type: | Article |
|---|---|
| Title: | Strain-Induced Spin-Resonance Shifts in Silicon Devices |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1103/PhysRevApplied.9.044014 |
| Publisher version: | https://doi.org/10.1103/PhysRevApplied.9.044014 |
| Language: | English |
| Additional information: | This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions. / This work received funding from the European Union (EU)’s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539. |
| Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, Thermal-Expansion, Relaxation, Aluminum, Metals, Donors, States, Qubit |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10047274 |
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