Knapp, CE;
Dyer, C;
Chadwick, NP;
Hazael, R;
Carmalt, CJ;
(2018)
Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide.
Polyhedron
, 140
pp. 35-41.
10.1016/j.poly.2017.10.036.
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Abstract
Aerosol assisted chemical vapour deposition (AACVD) has been used to deposit thin films of ZnO from the single-source precursor [Zn(OC(Me)CHC(Me)N( i Pr)) 2 ] (1) affording highly transparent ( > 80%) and conductive films (sheet resistance ∼70 KΩ/sq). Extension of this AACVD method whereby related precursors of the type, [R 2 M(OC(Me)CHC(Me)N( i Pr))] (R = Et, M = Al (2); R = Me, M = Ga (3)), isolated as oils, were added to the precursor solution allowed for the deposition of aluminium- and gallium-doped ZnO (AZO and GZO) films, respectively. Complexes 1–3 were characterised by elemental analysis, NMR and mass spectrometry. Films were deposited in under 30 min at 400 °C, from CH 2 Cl 2 /toluene solutions with a N 2 carrier gas. Herein we report the bulk resistivity, ρ, of AZO (0.252 Ω cm) and GZO (0.756 Ω cm) films deposited from this novel approach. All the films transparency exceeded 80% in the visible, X-ray diffraction (XRD) showed all films to crystallise in the wurtzite phase whilst X-ray photoemission spectroscopy (XPS) confirmed the presence of the Al and Ga dopants in the films, and highlighted the low C-contamination ( < 5%) this route offers. Investigation of a mechanism analogous to the Kirkendall effect confirmed that heating of GZO films at 1000 °C produced the spinel structure GaZn 2 O 4 .
| Type: | Article |
|---|---|
| Title: | Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.poly.2017.10.036 |
| Publisher version: | http://dx.doi.org/10.1016/j.poly.2017.10.036 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Zinc oxide, Thin films, Al doping, Ga doping, AACVD |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10040284 |
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