Swallow, JEN;
Williamson, BAD;
Whittles, TJ;
Birkett, M;
Featherstone, TJ;
Peng, N;
Abbott, A;
... Veal, TD; + view all
(2018)
Self-Compensation in Transparent Conducting F-Doped SnO2.
Advanced Functional Materials
, 28
(4)
, Article 1701900. 10.1002/adfm.201701900.
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Abstract
The factors limiting the conductivity of fluorine-doped tin dioxide (FTO) produced via atmospheric pressure chemical vapor deposition are investigated. Modeling of the transport properties indicates that the measured Hall effect mobilities are far below the theoretical ionized impurity scattering limit. Significant compensation of donors by acceptors is present with a compensation ratio of 0.5, indicating that for every two donors there is approximately one acceptor. Hybrid density functional theory calculations of defect and impurity formation energies indicate the most probable acceptor-type defects. The fluorine interstitial defect has the lowest formation energy in the degenerate regime of FTO. Fluorine interstitials act as singly charged acceptors at the high Fermi levels corresponding to degenerately n-type films. X-ray photoemission spectroscopy of the fluorine impurities is consistent with the presence of substitutional F O donors and interstitial F i in a roughly 2:1 ratio in agreement with the compensation ratio indicated by the transport modeling. Quantitative analysis through Hall effect, X-ray photoemission spectroscopy, and calibrated secondary ion mass spectrometry further supports the presence of compensating fluorine-related defects.
| Type: | Article |
|---|---|
| Title: | Self-Compensation in Transparent Conducting F-Doped SnO2 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1002/adfm.201701900 |
| Publisher version: | https://doi.org/10.1002/adfm.201701900 |
| Language: | English |
| Additional information: | © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
| Keywords: | Carrier transport; fluorine-doped stannic oxide; fluorine-doped tin dioxide; fluorine-doped tin oxide; self-compensation |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10040106 |
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