Gonzalez Burguete, CS;
(2017)
Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates.
Presented at: Barlow Lecture, UCL Institute of Education, 20 Bedford Way.
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Abstract
p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterization indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.
| Type: | Poster |
|---|---|
| Title: | Direct growth of InAsGaSb type II superlattice photodiodes on silicon substrates |
| Event: | Barlow Lecture |
| Location: | UCL Institute of Education, 20 Bedford Way |
| Open access status: | An open access version is available from UCL Discovery |
| Language: | English |
| Keywords: | Superlattice, infrared. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10039597 |
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