TASKER, PW;
STONEHAM, AM;
(1977)
QUENCHING OF LUMINESCENCE IN SEMICONDUCTORS BY CHARGED DEFECTS.
J PHYS C SOLID STATE
, 10
(24)
5131 - 5140.
10.1088/0022-3719/10/24/030.
![[thumbnail of 0022-3719_10_24_030.pdf]](https://discovery.ucl.ac.uk/style/images/fileicons/application_pdf.png) Preview |
PDF
0022-3719_10_24_030.pdf Download (627kB) |
Abstract
Charged point defects and dislocations create internal electric fields that can prevent the binding of carriers to luminescent centres such as N in GaP. The authors calculate the distribution of fields present in a semiconductor and its effect on the lifetime of an electron trapped at a localised impurity. The results show a decrease in the fraction of effective luminescent centres with increasing concentration of ionised donors and acceptors. Both unscreened dislocations and those with a compensating atmosphere of oppositely charged point defects are considered and the calculations show dark regions around them, as observed.
| Type: | Article |
|---|---|
| Title: | QUENCHING OF LUMINESCENCE IN SEMICONDUCTORS BY CHARGED DEFECTS |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/10/24/030 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/10/24/030 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59755 |
Archive Staff Only
 |
View Item |
