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ELECTRONIC STRUCTURE OF GE IN SIO2

HAGON, JP; JAROS, M; STONEHAM, AM; (1985) ELECTRONIC STRUCTURE OF GE IN SIO2. J PHYS C SOLID STATE , 18 (25) 4957 - 4962. 10.1088/0022-3719/18/25/014. Green open access

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Abstract

It is argued that one-electron theory is insufficient to account for the origin of the observed spectra of Ge in SiO2 ( alpha -quartz) crystals. A simple model is employed to show that impurity states responsible for ESR spectra of SiO2:Ge are stabilised by many-electron polarisation effects associated with the Ge atom itself and its immediate oxygen neighbours

Type: Article
Title: ELECTRONIC STRUCTURE OF GE IN SIO2
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/18/25/014
Publisher version: http://dx.doi.org/10.1088/0022-3719/18/25/014
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
URI: https://discovery.ucl.ac.uk/id/eprint/59667
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