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Nuclear spin switch in semiconductor quantum dots

Tartakovskii, AI; Wright, T; Russell, A; Fal'ko, VI; Van'kov, AB; Skiba-Szymanska, J; Drouzas, I; ... Hopkinson, M; + view all (2007) Nuclear spin switch in semiconductor quantum dots. Physical Review Letters , 98 (2) , Article 026806. 10.1103/PhysRevLett.98.026806. Green open access

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Abstract

We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a thresholdlike enhancement or reduction of the local nuclear field by up to 3 T can be generated by varying the pumping intensity. The excitation power threshold for such a nuclear spin “switch” is found to depend on both the external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of the spin transfer from electrons to the nuclei of the dot.

Type: Article
Title: Nuclear spin switch in semiconductor quantum dots
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.98.026806
Publisher version: http://dx.doi.org/10.1103/PhysRevLett.98.026806
Language: English
Additional information: © 2007 The American Physical Society
Keywords: ELECTRON; GAAS
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/45657
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