Linhart, WM;
Rajpalke, MK;
Buckeridge, J;
Murgatroyd, PAE;
Bomphrey, JJ;
Alaria, J;
Catlow, CRA;
... Veal, TD; + view all
(2016)
Band gap reduction in InNxSb1-x alloys: Optical absorption, k . P modeling, and density functional theory.
Applied Physics Letters
, 109
(13)
, Article 132104. 10.1063/1.4963836.
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Abstract
Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k · P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory.
Type: | Article |
---|---|
Title: | Band gap reduction in InNxSb1-x alloys: Optical absorption, k . P modeling, and density functional theory |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1063/1.4963836 |
Publisher version: | http://dx.doi.org/10.1063/1.4963836 |
Language: | English |
Additional information: | Copyright © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, Total-energy Calculations, Molecular-beam Epitaxy, Wave Basis-set, Dilute Innxsb1-x, Growth, Semiconductors, Metals, Red |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
URI: | https://discovery.ucl.ac.uk/id/eprint/1522318 |
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