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Monte Carlo simulation of near-field terahertz emission from semiconductors

Corzo-Garcia, SC; Hernandez-Serrano, AI; Castro-Camus, E; Mitrofanov, O; (2016) Monte Carlo simulation of near-field terahertz emission from semiconductors. Physical Review B , 94 (4) , Article 045301. 10.1103/PhysRevB.94.045301. Green open access

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Abstract

We simulated the carrier dynamics in InGaAs after ultrafast photoexcitation. By using a finite-difference time-domain approach we were able to analyze the near terahertz field emission caused by the motion of such carriers. We found that both the current parallel and normal to the interface take a relevant role in the terahertz emission. We also found that the ballistic motion of the carriers after photoexcitation dominates the emission rather than diffusion.

Type: Article
Title: Monte Carlo simulation of near-field terahertz emission from semiconductors
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevB.94.045301
Publisher version: http://dx.doi.org/10.1103/PhysRevB.94.045301
Language: English
Additional information: Copyright © 2016 American Physical Society. The published version of record is available at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.045301
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1505816
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