Kenyon, AJ;
Trwoga, PF;
Pitt, CW;
Rehm, G;
(1996)
The origin of photoluminescence from thin films of silicon-rich silica.
Journal of Applied Physics
, 79
(12)
9291 - 9300.
10.1063/1.362605.
Preview |
PDF
148833_JAP 79-9291 1996.pdf Available under License : See the attached licence file. Download (177kB) |
Abstract
We have carried out a study of the photoluminescence properties of silicon‐rich silica. A series of films grown using plasma enhanced chemical vapor deposition over a range of growth conditions were annealed under argon at selected temperatures. Photoluminescence spectra were measured for each film at room temperature and for selected films at cryogenic temperatures. The photoluminescence spectra exhibit two bands. Fourier transform infrared and electron spin resonance spectroscopies were used to investigate bonding and defect states within the films. The data obtained strongly suggest the presence of two luminescence mechanisms which exhibit different dependencies on film growth conditions and postprocessing. We make assignments of the two mechanisms as (1) defect luminescence associated with oxygen vacancies and (2) radiative recombination of electron‐hole pairs confined within nanometer‐size silicon clusters ("quantum confinement").
Type: | Article |
---|---|
Title: | The origin of photoluminescence from thin films of silicon-rich silica |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1063/1.362605 |
Publisher version: | http://dx.doi.org/10.1063/1.362605 |
Language: | English |
Additional information: | Copyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Kenyon, AJ and Trwoga, PF and Pitt, CW and Rehm, G (1996) The origin of photoluminescence from thin films of silicon-rich silica. Journal of Applied Physics , 79 (12) 9291 – 9300 and may be found at http://link.aip.org/link/?jap/79/09291 |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/148833 |
Archive Staff Only
View Item |