Pugh, CJ; (2013) End Point Detection in Reactive Ion Etching. Doctoral thesis , UCL (University College London).

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Abstract

End-point detection for deep reactive ion etch of silicon in the semiconductor industry has been investigated with a focus on statistical treatments on optical emission spectroscopy. The data reduction technique Principal components analysis (PCA) has been briefly reviewed and analysed as an introduction to independent component analysis (ICA). ICA is a computational dimension reduction technique capable of separating multivariate data into single components. In this instance PCA and ICA are used in to combine the spectral channels of optical emission spectroscopy of plasma processes into a reduced number of components. ICA is based on a fixed-point iteration process maximizing non-gaussianity as a measure of statistical independence. ICA has been shown to offer an improvement in signal to noise ratio when compared to principal component analysis, which has been widely used in previous studies into end-pointing. In addition to the end-point investigation, a study was carried out into the fabrication of arrays of free standing silicon nanorods. The fabrication process consisted of an electron beam lithograpy stage to pattern bare silicon, followed by a deep reactive ion etch - using the Bosch process - to create the nanorods. A variety of difference diameter nanorods, with a selection of pitch dimensions were created using this technique.

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