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Co-doped 1.3μm InAs Quantum Dot Lasers with high gain and low threshold current

Maglio, B; Jarvis, L; Allford, CP; Gillgrass, S; Enderson, A; Shutts, S; Deng, H; ... Smowton, PM; + view all (2022) Co-doped 1.3μm InAs Quantum Dot Lasers with high gain and low threshold current. In: Proceedings of the IEEE Photonics Conference (IPC) 2022. Institute of Electrical and Electronics Engineers (IEEE) Green open access

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Abstract

The mechanism by which co-doping reduces threshold current in O-band Quantum dot lasers is examined, with n-type direct doping of the dots reducing threshold current and p-type modulation doping improving the temperature dependence of threshold current density, relative to undoped samples.

Type: Proceedings paper
Title: Co-doped 1.3μm InAs Quantum Dot Lasers with high gain and low threshold current
Event: 2022 IEEE Photonics Conference, IPC 2022
Dates: 13th-17th November 2022
ISBN-13: 978-1-6654-3487-4
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/IPC53466.2022.9975769
Publisher version: https://doi.org/10.1109/IPC53466.2022.9975769
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10164300
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